What Does BESOI Stand For?

BESOI stands for Bonded And Etched Back Silicon On Insulator

BESOI, or Bonded And Etched Back Silicon On Insulator, is a semiconductor fabrication technique that involves bonding two silicon substrates together and selectively etching back the top layer. This process results in a high-quality silicon-on-insulator structure, which minimizes parasitic capacitance and improves performance in integrated circuits. BESOI is commonly utilized in applications requiring enhanced electrical properties, such as RF devices, MEMS, and advanced CMOS technologies.