What Does CBE Stand For?
CBE stands for Chemical Beam Epitaxy
Chemical Beam Epitaxy (CBE) is a high-precision thin-film deposition technique used in the fabrication of semiconductor materials. It involves the chemical reaction of gaseous precursors, which are directed towards a heated substrate in a controlled environment, allowing for the growth of crystalline layers with atomic-level accuracy. CBE is particularly valued for its ability to produce high-quality heterostructures and quantum wells, making it essential in the development of advanced electronic and optoelectronic devices.
Added on 14th April 2008 | Last edited on 17th June 2025 | Edit Acronym