What Does FERAM Stand For?

FERAM stands for Ferroelectric Random Access Memory

FERAM, or Ferroelectric Random Access Memory, is a non-volatile memory technology that utilizes ferroelectric materials to store data. It combines the benefits of fast read and write speeds typical of traditional RAM with the data retention capabilities of non-volatile memory. FERAM is characterized by its ability to maintain information without power, making it a promising solution for enhancing the performance and efficiency of electronic devices in applications such as mobile computing, automotive systems, and various consumer electronics. Its unique properties allow for lower power consumption and improved durability compared to conventional memory technologies.

Added on 14th April 2008 | Last edited on 17th June 2025 | Edit Acronym