What Does IBAE Stand For?

IBAE stands for Ion Beam Assisted Etching

IBAE, or Ion Beam Assisted Etching, is a sophisticated semiconductor fabrication technique that enhances the etching process through the utilization of ion beams. This method improves material removal rates and etching precision by directing energetic ions toward the substrate, resulting in more controlled and precise patterning. IBAE is particularly valuable in the production of microelectronic devices, where high fidelity and resolution are critical.