What Does IBARE Stand For?

IBARE stands for Ion Beam Assisted Radical Etching

IBARE, or Ion Beam Assisted Radical Etching, is an advanced material processing technique that enhances the precision of etching processes using energetic ion beams. This method combines the benefits of ion beam bombardment with radical etching to achieve high-resolution patterning and selective material removal on various substrates. IBARE is widely employed in semiconductor fabrication, nanotechnology, and microelectronics, where it enables improved surface quality and control over etch profiles.