What Does SIMOX Stand For?

SIMOX stands for Separation By Implanted Oxygen

SIMOX, or Separation By Implanted Oxygen, is a semiconductor fabrication technique primarily used to create layers of silicon-on-insulator (SOI) by implanting oxygen ions into silicon wafers. This innovative process enables the formation of a buried oxide layer, enhancing electrical performance, reducing parasitic capacitance, and improving device isolation. SIMOX technology is crucial for advancing integrated circuit design and manufacturing, particularly in high-performance and low-power applications.